Infrared silicon photodiodes
PiN photodiodes manufactured using high resistivity silicon for full depletion and high sensitivity in the 800nm to 1100nm region. Silicon thickness tailored to optimise speed or sensitivity in a given application.
3T series optimises speed
4X series optimises response at 1064nm
Infrared silicon photodiodes
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Geometries: include:
- single element
- quadrant with standard and narrow transition widths (200µm / 70µm)
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